PMN42XPEAH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMN42XPEAH Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMN42XPEAH nach Preis ab 0.31 EUR bis 0.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMN42XPEAH | Hersteller : Nexperia |
MOSFET PMN42XPEA/SOT457/SC-74 |
auf Bestellung 2980 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
PMN42XPEAH | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5.7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 16013 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
PMN42XPEAH | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
PMN42XPEAH | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |