PMN55ENEH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 60V 4.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
Power Dissipation (Max): 560mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
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Technische Details PMN55ENEH Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V, Power Dissipation (Max): 560mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V.
Weitere Produktangebote PMN55ENEH nach Preis ab 0.14 EUR bis 1.22 EUR
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PMN55ENEH | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 3.4A 6-Pin TSOP T/R |
auf Bestellung 5950 Stücke: Lieferzeit 14-21 Tag (e) |
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PMN55ENEH | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 3.4A 6-Pin TSOP T/R |
auf Bestellung 5950 Stücke: Lieferzeit 14-21 Tag (e) |
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PMN55ENEH | Hersteller : Nexperia |
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auf Bestellung 12615 Stücke: Lieferzeit 14-28 Tag (e) |
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PMN55ENEH | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V Power Dissipation (Max): 560mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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PMN55ENEH | Hersteller : NEXPERIA |
60 V, N-channel Trench MOSFET |
Produkt ist nicht verfügbar |
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PMN55ENEH | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 3.4A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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PMN55ENEH | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEH | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |