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PMPB08R6ENX

PMPB08R6ENX Nexperia USA Inc.


PMPB08R6EN.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 11A DFN2020M-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.38 EUR
Mindestbestellmenge: 3000
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Technische Details PMPB08R6ENX Nexperia USA Inc.

Description: MOSFET N-CH 30V 11A DFN2020M-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V.

Weitere Produktangebote PMPB08R6ENX nach Preis ab 0.29 EUR bis 1.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMPB08R6ENX PMPB08R6ENX Hersteller : Nexperia PMPB08R6EN-1919526.pdf MOSFET PMPB08R6EN/SOT1220-2/DFN2020M-
auf Bestellung 8319 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
54+0.97 EUR
64+ 0.82 EUR
100+ 0.57 EUR
500+ 0.45 EUR
1000+ 0.36 EUR
3000+ 0.32 EUR
9000+ 0.29 EUR
Mindestbestellmenge: 54
PMPB08R6ENX PMPB08R6ENX Hersteller : Nexperia USA Inc. PMPB08R6EN.pdf Description: MOSFET N-CH 30V 11A DFN2020M-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
auf Bestellung 5815 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
29+ 0.93 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 24
PMPB08R6ENX Hersteller : NEXPERIA pmpb08r6en.pdf Trans MOSFET N-CH 30V 11A 6-Pin DFN-M EP T/R
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