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PMPB10XNE,115

PMPB10XNE,115 Nexperia USA Inc.


PMPB10XNE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
auf Bestellung 2473 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
27+ 0.97 EUR
100+ 0.67 EUR
500+ 0.53 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 23
Produktrezensionen
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Technische Details PMPB10XNE,115 Nexperia USA Inc.

Description: MOSFET N-CH 20V 9A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V.

Weitere Produktangebote PMPB10XNE,115 nach Preis ab 0.41 EUR bis 1.22 EUR

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Preis ohne MwSt
PMPB10XNE,115 PMPB10XNE,115 Hersteller : Nexperia PMPB10XNE-2938574.pdf MOSFET PMPB10XNE/SOT1220/SOT1220
auf Bestellung 3055 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
43+1.22 EUR
50+ 1.04 EUR
100+ 0.78 EUR
500+ 0.61 EUR
1000+ 0.47 EUR
3000+ 0.44 EUR
6000+ 0.41 EUR
Mindestbestellmenge: 43
PMPB10XNE,115 Hersteller : NEXPERIA PMPB10XNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNE,115 PMPB10XNE,115 Hersteller : Nexperia USA Inc. PMPB10XNE.pdf Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
Produkt ist nicht verfügbar
PMPB10XNE,115 Hersteller : NEXPERIA PMPB10XNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar