PMPB10XNEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
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Technische Details PMPB10XNEZ Nexperia USA Inc.
Description: MOSFET N-CH 20V 9A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V.
Weitere Produktangebote PMPB10XNEZ nach Preis ab 0.34 EUR bis 1.14 EUR
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PMPB10XNEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 9A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V |
auf Bestellung 17562 Stücke: Lieferzeit 21-28 Tag (e) |
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PMPB10XNEZ | Hersteller : Nexperia |
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auf Bestellung 4602 Stücke: Lieferzeit 14-28 Tag (e) |
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| PMPB10XNEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 34nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 36A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 21mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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PMPB10XNEZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 20V 9A 6-Pin DFN-MD EP |
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| PMPB10XNEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 34nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 36A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 21mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |