PMPB10XNX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 9.5A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 3.8W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1761 pF @ 15 V
auf Bestellung 8658 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 1.04 EUR |
| 30+ | 0.88 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.39 EUR |
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Technische Details PMPB10XNX Nexperia USA Inc.
Description: MOSFET N-CH 30V 9.5A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 9.5A, 4.5V, Power Dissipation (Max): 3.8W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1761 pF @ 15 V.
Weitere Produktangebote PMPB10XNX nach Preis ab 0.58 EUR bis 1.14 EUR
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PMPB10XNX | Hersteller : Nexperia |
MOSFET PMPB10XNX |
auf Bestellung 6 Stücke: Lieferzeit 14-28 Tag (e) |
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| PMPB10XNX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 30nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 38A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 30V Drain current: 6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMPB10XNX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 9.5A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 9.5A, 4.5V Power Dissipation (Max): 3.8W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1761 pF @ 15 V |
Produkt ist nicht verfügbar |
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| PMPB10XNX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 30nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 38A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 30V Drain current: 6A On-state resistance: 22mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |