PMPB12EPX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 30V 7.9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.9A, 10V
Power Dissipation (Max): 1.7W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 15 V
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Technische Details PMPB12EPX Nexperia USA Inc.
Description: MOSFET P-CH 30V 7.9A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.9A, 10V, Power Dissipation (Max): 1.7W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 15 V.
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PMPB12EPX | Hersteller : Nexperia |
MOSFET PMPB12EPX |
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