Produkte > NEXPERIA USA INC. > PMPB12UNEX
PMPB12UNEX

PMPB12UNEX Nexperia USA Inc.

PMPB12UNE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 11.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.33 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details PMPB12UNEX Nexperia USA Inc.

Description: MOSFET N-CH 20V 11.4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V.

Weitere Produktangebote PMPB12UNEX nach Preis ab 0.28 EUR bis 1.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMPB12UNEX PMPB12UNEX Hersteller : Nexperia USA Inc. PMPB12UNE.pdf Description: MOSFET N-CH 20V 11.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
28+ 0.95 EUR
100+ 0.57 EUR
500+ 0.53 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 22
PMPB12UNEX PMPB12UNEX Hersteller : Nexperia PMPB12UNE-1539886.pdf MOSFET PMPB12UNE/SOT1220/SOT1220
auf Bestellung 5489 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
43+1.23 EUR
55+ 0.96 EUR
100+ 0.54 EUR
1000+ 0.36 EUR
3000+ 0.32 EUR
9000+ 0.29 EUR
24000+ 0.28 EUR
Mindestbestellmenge: 43
PMPB12UNEX Hersteller : NEXPERIA PMPB12UNE.pdf PMPB12UNEX SMD N channel transistors
Produkt ist nicht verfügbar