PMPB15XN,115 NEXPERIA
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.6A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 20.2nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.6A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 20.2nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
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Technische Details PMPB15XN,115 NEXPERIA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A, Case: DFN2020MD-6; SOT1220, Drain-source voltage: 20V, Drain current: 4.6A, On-state resistance: 32mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Gate charge: 20.2nC, Technology: Trench, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 24A, Mounting: SMD, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote PMPB15XN,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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PMPB15XN,115 | Hersteller : NXP Semiconductors | Description: MOSFET N-CH 20V 7.3A DFN2020MD-6 |
Produkt ist nicht verfügbar |
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PMPB15XN,115 | Hersteller : Nexperia |
 MOSFET PMPB15XN/SOT1220/SOT1220 |
Produkt ist nicht verfügbar |
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| PMPB15XN,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 4.6A On-state resistance: 32mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 20.2nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A Mounting: SMD |
Produkt ist nicht verfügbar |