PMPB15XP,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMPB15XP,115 Nexperia USA Inc.
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V.
Weitere Produktangebote PMPB15XP,115 nach Preis ab 0.42 EUR bis 1.12 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMPB15XP,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V |
auf Bestellung 9025 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
PMPB15XP,115 | Hersteller : Nexperia | MOSFET PMPB15XP/SOT1220/SOT1220 |
auf Bestellung 4522 Stücke: Lieferzeit 14-28 Tag (e) |
||||||||||||||
PMPB15XP,115 | Hersteller : NEXPERIA | Trans MOSFET P-CH 12V 8.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
PMPB15XP,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Power dissipation: 1.7W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
PMPB15XP,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Power dissipation: 1.7W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |