PMPB19XP,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
auf Bestellung 1995 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 1.04 EUR |
| 30+ | 0.89 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.39 EUR |
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Technische Details PMPB19XP,115 Nexperia USA Inc.
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V.
Weitere Produktangebote PMPB19XP,115 nach Preis ab 0.31 EUR bis 1.04 EUR
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PMPB19XP,115 | Hersteller : Nexperia |
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auf Bestellung 28747 Stücke: Lieferzeit 14-28 Tag (e) |
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PMPB19XP,115 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 7.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMPB19XP,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A Pulsed drain current: -30A Gate charge: 43.2nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: -4.5A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: DFN2020MD-6; SOT1220 On-state resistance: 33mΩ Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMPB19XP,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 7.2A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V |
Produkt ist nicht verfügbar |
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| PMPB19XP,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A Pulsed drain current: -30A Gate charge: 43.2nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: -4.5A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: DFN2020MD-6; SOT1220 On-state resistance: 33mΩ Mounting: SMD |
Produkt ist nicht verfügbar |