auf Bestellung 6066 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.02 EUR |
| 64+ | 0.82 EUR |
| 125+ | 0.42 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.29 EUR |
| 9000+ | 0.25 EUR |
| 24000+ | 0.23 EUR |
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Technische Details PMPB20ENZ Nexperia
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V.
Weitere Produktangebote PMPB20ENZ nach Preis ab 0.32 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMPB20ENZ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 7.2A DFN2020MD-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
auf Bestellung 2850 Stücke: Lieferzeit 21-28 Tag (e) |
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PMPB20ENZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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PMPB20ENZ | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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| PMPB20ENZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.6A Pulsed drain current: 30A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 10.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMPB20ENZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
Produkt ist nicht verfügbar |
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| PMPB20ENZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.6A Pulsed drain current: 30A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 10.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |