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PMPB20UN,115

PMPB20UN,115 Nexperia


PMPB20UN-842495.pdf Hersteller: Nexperia
MOSFET PMPB20UN/SOT1220/REEL7
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Technische Details PMPB20UN,115 Nexperia

Description: MOSFET N-CH 20V 6.6A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 6.6A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-DFN2020MD (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V.

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PMPB20UN,115 PMPB20UN,115 Hersteller : NXP Semiconductors 177469897733742pmpb20un.pdf Trans MOSFET N-CH 20V 6.6A 6-Pin DFN-MD EP T/R
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PMPB20UN,115 PMPB20UN,115 Hersteller : NXP USA Inc. PMPB20UN.pdf Description: MOSFET N-CH 20V 6.6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.6A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN2020MD (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Produkt ist nicht verfügbar