auf Bestellung 5754 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
44+ | 1.19 EUR |
54+ | 0.96 EUR |
105+ | 0.5 EUR |
1000+ | 0.37 EUR |
3000+ | 0.33 EUR |
9000+ | 0.3 EUR |
24000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMPB20XNEAZ Nexperia
Description: MOSFET N-CH 20V 7.5A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V, Power Dissipation (Max): 460mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote PMPB20XNEAZ nach Preis ab 0.38 EUR bis 1.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PMPB20XNEAZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 7.5A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V Power Dissipation (Max): 460mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2912 Stücke: Lieferzeit 21-28 Tag (e) |
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PMPB20XNEAZ | Hersteller : NXP |
Description: NXP - PMPB20XNEAZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6423 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20XNEAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - PMPB20XNEAZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6423 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20XNEAZ | Hersteller : NEXPERIA | Trans MOSFET N-CH 20V 7.5A Automotive 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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PMPB20XNEAZ | Hersteller : Nexperia | Trans MOSFET N-CH 20V 7.5A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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PMPB20XNEAZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 7.5A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V Power Dissipation (Max): 460mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |