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PMPB215ENEAX

PMPB215ENEAX Nexperia USA Inc.

PMPB215ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 1.9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
6000+ 0.32 EUR
15000+ 0.3 EUR
Mindestbestellmenge: 3000
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Technische Details PMPB215ENEAX Nexperia USA Inc.

Description: MOSFET N-CH 80V 1.9A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V, Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V.

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PMPB215ENEAX PMPB215ENEAX Hersteller : Nexperia USA Inc. PMPB215ENEA.pdf Description: MOSFET N-CH 80V 1.9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
27+ 0.97 EUR
100+ 0.66 EUR
500+ 0.5 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 22
PMPB215ENEAX PMPB215ENEAX Hersteller : Nexperia PMPB215ENEA-1539724.pdf MOSFET PMPB215ENEA/SOT1220/SOT1220
auf Bestellung 17187 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
43+1.22 EUR
60+ 0.88 EUR
100+ 0.63 EUR
500+ 0.5 EUR
1000+ 0.38 EUR
3000+ 0.31 EUR
6000+ 0.3 EUR
Mindestbestellmenge: 43
PMPB215ENEAX PMPB215ENEAX Hersteller : NEXPERIA 3892417101971943pmpb215enea.pdf Trans MOSFET N-CH 80V 1.9A Automotive 6-Pin DFN-MD EP T/R
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PMPB215ENEAX Hersteller : NEXPERIA PMPB215ENEA.pdf PMPB215ENEAX SMD N channel transistors
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