PMPB29XNE,115 NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET N-CH 30V 5A DFN2020MD-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 19000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3184+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMPB29XNE,115 NXP USA Inc.
Description: MOSFET N-CH 30V 5A DFN2020MD-6, Packaging: Bulk, Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN1010B-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V.
Weitere Produktangebote PMPB29XNE,115 nach Preis ab 0.54 EUR bis 1.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMPB29XNE,115 | Hersteller : Nexperia |
MOSFET PMPB29XNE/SOT1220/SOT1220 |
auf Bestellung 3036 Stücke: Lieferzeit 14-28 Tag (e) |
|