auf Bestellung 8655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.74 EUR |
10+ | 0.6 EUR |
100+ | 0.41 EUR |
500+ | 0.31 EUR |
1000+ | 0.23 EUR |
9000+ | 0.19 EUR |
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Technische Details PMPB47XP,115 Nexperia
Description: MOSFET P-CH 30V 4A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V.
Weitere Produktangebote PMPB47XP,115 nach Preis ab 0.24 EUR bis 0.81 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PMPB47XP,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 4A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V |
auf Bestellung 2474 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB47XP,115 | Hersteller : NEXPERIA | Trans MOSFET P-CH 30V 4A 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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PMPB47XP,115 | Hersteller : NEXPERIA | PMPB47XP.115 SMD P channel transistors |
Produkt ist nicht verfügbar |
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PMPB47XP,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 4A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V |
Produkt ist nicht verfügbar |