PMPB55ENEAX Nexperia
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
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Technische Details PMPB55ENEAX Nexperia
Description: MOSFET N-CH 60V 4A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V, Power Dissipation (Max): 1.65W (Ta), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote PMPB55ENEAX nach Preis ab 0.16 EUR bis 1.04 EUR
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PMPB55ENEAX | Hersteller : Nexperia |
 Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB55ENEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
auf Bestellung 5218 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB55ENEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
auf Bestellung 5218 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB55ENEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB55ENEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB55ENEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB55ENEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB55ENEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V Power Dissipation (Max): 1.65W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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PMPB55ENEAX | Hersteller : Nexperia |
MOSFET PMPB55ENEA/SOT1220/SOT1220 |
auf Bestellung 6381 Stücke: Lieferzeit 14-28 Tag (e) |
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PMPB55ENEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V Power Dissipation (Max): 1.65W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4818 Stücke: Lieferzeit 21-28 Tag (e) |
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PMPB55ENEAX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 4A Automotive 6-Pin DFN-MD EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMPB55ENEAX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 1.65W Case: DFN2020MD-6; SOT1220 On-state resistance: 106mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PMPB55ENEAX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 1.65W Case: DFN2020MD-6; SOT1220 On-state resistance: 106mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |