PMT560ENEAX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 1.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 715mOhm @ 1.1A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.29 EUR |
| 2000+ | 0.27 EUR |
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Technische Details PMT560ENEAX Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 715mOhm @ 1.1A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMT560ENEAX nach Preis ab 0.23 EUR bis 1.02 EUR
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PMT560ENEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 1.1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 715mOhm @ 1.1A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: SOT-223 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2525 Stücke: Lieferzeit 21-28 Tag (e) |
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PMT560ENEAX | Hersteller : Nexperia |
MOSFET PMT560ENEA/SOT223/SC-73 |
auf Bestellung 4973 Stücke: Lieferzeit 14-28 Tag (e) |
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PMT560ENEAX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 700mA; Idm: 4.4A; SC73,SOT223 Case: SC73; SOT223 Mounting: SMD Pulsed drain current: 4.4A Gate charge: 4.4nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate; logic level Drain current: 0.7A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel; tape On-state resistance: 1.62Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMT560ENEAX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SC-73 T/R |
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PMT560ENEAX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 700mA; Idm: 4.4A; SC73,SOT223 Case: SC73; SOT223 Mounting: SMD Pulsed drain current: 4.4A Gate charge: 4.4nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate; logic level Drain current: 0.7A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel; tape On-state resistance: 1.62Ω |
Produkt ist nicht verfügbar |