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PMV100ENEAR

PMV100ENEAR Nexperia USA Inc.


PMV100ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 460mW (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
Mindestbestellmenge: 3000
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Technische Details PMV100ENEAR Nexperia USA Inc.

Description: MOSFET N-CH 30V 3A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, Power Dissipation (Max): 460mW (Ta), 4.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V.

Weitere Produktangebote PMV100ENEAR nach Preis ab 0.24 EUR bis 1.17 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMV100ENEAR PMV100ENEAR Hersteller : Nexperia PMV100ENEA-2938735.pdf MOSFET PMV100ENEA/SOT23/TO-236AB
auf Bestellung 20644 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
127+0.41 EUR
163+ 0.32 EUR
169+ 0.31 EUR
3000+ 0.26 EUR
45000+ 0.24 EUR
Mindestbestellmenge: 127
PMV100ENEAR PMV100ENEAR Hersteller : Nexperia USA Inc. PMV100ENEA.pdf Description: MOSFET N-CH 30V 3A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 460mW (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
30+ 0.89 EUR
100+ 0.53 EUR
500+ 0.49 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 23
PMV100ENEAR PMV100ENEAR Hersteller : NEXPERIA 268800483584246pmv100enea.pdf Trans MOSFET N-CH 30V 3A Automotive 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
PMV100ENEAR PMV100ENEAR Hersteller : NEXPERIA PMV100ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100ENEAR PMV100ENEAR Hersteller : NEXPERIA PMV100ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Produkt ist nicht verfügbar