PMV100EPAR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 60V 2.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.2A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 616 pF @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.28 EUR |
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Technische Details PMV100EPAR Nexperia USA Inc.
Description: MOSFET P-CH 60V 2.2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 2.2A, 10V, Power Dissipation (Max): 710mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 616 pF @ 30 V.
Weitere Produktangebote PMV100EPAR nach Preis ab 0.27 EUR bis 1.2 EUR
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PMV100EPAR | Hersteller : Nexperia |
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auf Bestellung 85974 Stücke: Lieferzeit 14-28 Tag (e) |
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PMV100EPAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 60V 2.2A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.2A, 10V Power Dissipation (Max): 710mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 616 pF @ 30 V |
auf Bestellung 20343 Stücke: Lieferzeit 21-28 Tag (e) |
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PMV100EPAR | Hersteller : NEXPERIA |
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PMV100EPAR | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.4A; Idm: -9A Mounting: SMD Case: SOT23; TO236AB Drain current: -1.4A On-state resistance: 276mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -9A Drain-source voltage: -60V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV100EPAR | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.4A; Idm: -9A Mounting: SMD Case: SOT23; TO236AB Drain current: -1.4A On-state resistance: 276mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -9A Drain-source voltage: -60V |
Produkt ist nicht verfügbar |