auf Bestellung 14828 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.02 EUR |
| 65+ | 0.81 EUR |
| 100+ | 0.55 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.27 EUR |
| 9000+ | 0.25 EUR |
| 24000+ | 0.23 EUR |
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Technische Details PMV15ENER Nexperia
Description: PMV15ENE/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 5.8A, 10V, Power Dissipation (Max): 700mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V.
Weitere Produktangebote PMV15ENER nach Preis ab 0.32 EUR bis 1.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PMV15ENER | Hersteller : Nexperia USA Inc. |
 Description: PMV15ENE/SOT23/TO-236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5.8A, 10V Power Dissipation (Max): 700mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PMV15ENER | Hersteller : Nexperia USA Inc. |
Description: PMV15ENE/SOT23/TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5.8A, 10V Power Dissipation (Max): 700mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V |
auf Bestellung 8074 Stücke: Lieferzeit 21-28 Tag (e) |
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