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PMV164ENEAR

PMV164ENEAR Nexperia USA Inc.

PMV164ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.6A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V
Power Dissipation (Max): 640mW (Ta), 5.8W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
6000+ 0.18 EUR
9000+ 0.16 EUR
Mindestbestellmenge: 3000
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Technische Details PMV164ENEAR Nexperia USA Inc.

Description: MOSFET N-CH 60V 1.6A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V, Power Dissipation (Max): 640mW (Ta), 5.8W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V, Qualification: AEC-Q101.

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PMV164ENEAR PMV164ENEAR Hersteller : Nexperia USA Inc. PMV164ENEA.pdf Description: MOSFET N-CH 60V 1.6A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V
Power Dissipation (Max): 640mW (Ta), 5.8W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24804 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
PMV164ENEAR PMV164ENEAR Hersteller : Nexperia PMV164ENEA-1596293.pdf MOSFET PMV164ENEA/SOT23/TO-236AB
auf Bestellung 86514 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
50+1.04 EUR
71+ 0.74 EUR
171+ 0.3 EUR
1000+ 0.22 EUR
3000+ 0.18 EUR
9000+ 0.16 EUR
24000+ 0.15 EUR
Mindestbestellmenge: 50
PMV164ENEAR PMV164ENEAR Hersteller : NEXPERIA pmv164enea.pdf Trans MOSFET N-CH 60V 1.6A Automotive 3-Pin SOT-23 T/R
auf Bestellung 1390 Stücke:
Lieferzeit 14-21 Tag (e)
PMV164ENEAR Hersteller : NEXPERIA PMV164ENEA.pdf PMV164ENEAR SMD N channel transistors
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