PMV20XNER NEXPERIA
Hersteller: NEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 24A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 24A
Case: SOT23; TO236AB
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3417 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 262+ | 0.27 EUR |
| 291+ | 0.25 EUR |
| 385+ | 0.19 EUR |
| 407+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMV20XNER NEXPERIA
Description: MOSFET N-CH 30V 5.7A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 5.7A, 4.5V, Power Dissipation (Max): 510mW (Ta), 6.94W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V.
Weitere Produktangebote PMV20XNER nach Preis ab 0.18 EUR bis 1.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PMV20XNER | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 24A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.6A Pulsed drain current: 24A Case: SOT23; TO236AB On-state resistance: 37mΩ Mounting: SMD Gate charge: 18.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 3417 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
PMV20XNER | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 5.7A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 5.7A, 4.5V Power Dissipation (Max): 510mW (Ta), 6.94W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
PMV20XNER | Hersteller : Nexperia |
MOSFET PMV20XNE/SOT23/TO-236AB |
auf Bestellung 92492 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
PMV20XNER | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 5.7A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 5.7A, 4.5V Power Dissipation (Max): 510mW (Ta), 6.94W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
auf Bestellung 29933 Stücke: Lieferzeit 21-28 Tag (e) |
|