auf Bestellung 15970 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.02 EUR |
| 60+ | 0.87 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.33 EUR |
| 9000+ | 0.3 EUR |
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Technische Details PMV240SPR Nexperia
Description: MOSFET P-CH 100V 1.2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 365mOhm @ 1.2A, 10V, Power Dissipation (Max): 710mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V.
Weitere Produktangebote PMV240SPR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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PMV240SPR | Hersteller : NEXPERIA |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.8A Pulsed drain current: -5A Case: SOT23; TO236AB Gate-source voltage: ±25V On-state resistance: 840mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMV240SPR | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 100V 1.2A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 365mOhm @ 1.2A, 10V Power Dissipation (Max): 710mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V |
Produkt ist nicht verfügbar |
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| PMV240SPR | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 100V 1.2A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 365mOhm @ 1.2A, 10V Power Dissipation (Max): 710mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V |
Produkt ist nicht verfügbar |
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PMV240SPR | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.8A Pulsed drain current: -5A Case: SOT23; TO236AB Gate-source voltage: ±25V On-state resistance: 840mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |