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PMV28ENEAR

PMV28ENEAR Nexperia USA Inc.

PMV28ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
Mindestbestellmenge: 3000
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Technische Details PMV28ENEAR Nexperia USA Inc.

Description: MOSFET N-CH 30V 4.4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V, Power Dissipation (Max): 660mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V, Qualification: AEC-Q101.

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PMV28ENEAR PMV28ENEAR Hersteller : Nexperia USA Inc. PMV28ENEA.pdf Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 6720 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
38+ 0.69 EUR
100+ 0.42 EUR
500+ 0.38 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 30
PMV28ENEAR PMV28ENEAR Hersteller : Nexperia PMV28ENEA-1596142.pdf MOSFET PMV28ENEA/SOT23/TO-236AB
auf Bestellung 31343 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
59+0.89 EUR
80+ 0.66 EUR
110+ 0.48 EUR
500+ 0.37 EUR
1000+ 0.28 EUR
3000+ 0.23 EUR
6000+ 0.22 EUR
Mindestbestellmenge: 59
PMV28ENEAR PMV28ENEAR Hersteller : NEXPERIA pmv28enea.pdf 30 V, N-channel Trench MOSFET
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PMV28ENEAR Hersteller : NEXPERIA PMV28ENEA.pdf PMV28ENEAR SMD N channel transistors
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