PMV30XPAR

PMV30XPAR Nexperia USA Inc.


PMV30XPA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.9A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.26 EUR
9000+ 0.23 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details PMV30XPAR Nexperia USA Inc.

Description: MOSFET P-CH 20V 4.9A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V, Power Dissipation (Max): 610mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PMV30XPAR nach Preis ab 0.23 EUR bis 1.02 EUR

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Preis ohne MwSt
PMV30XPAR PMV30XPAR Hersteller : Nexperia USA Inc. PMV30XPA.pdf Description: MOSFET P-CH 20V 4.9A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 22170 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
34+ 0.77 EUR
100+ 0.46 EUR
500+ 0.43 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 26
PMV30XPAR PMV30XPAR Hersteller : Nexperia PMV30XPA-1713855.pdf MOSFET PMV30XPA/SOT23/TO-236AB
auf Bestellung 10492 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.02 EUR
67+ 0.78 EUR
121+ 0.43 EUR
1000+ 0.29 EUR
3000+ 0.26 EUR
9000+ 0.23 EUR
Mindestbestellmenge: 52
PMV30XPAR PMV30XPAR Hersteller : NEXPERIA PMV30XPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30XPAR Hersteller : NEXPERIA pmv30xpa.pdf Trans MOSFET P-CH 20V 4.9A Automotive AEC-Q101 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
PMV30XPAR PMV30XPAR Hersteller : NEXPERIA PMV30XPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar