PMV33UPE,215 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 20V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.45 EUR |
| 6000+ | 0.42 EUR |
| 9000+ | 0.39 EUR |
| 30000+ | 0.38 EUR |
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Technische Details PMV33UPE,215 Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V, Power Dissipation (Max): 490mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V.
Weitere Produktangebote PMV33UPE,215 nach Preis ab 0.4 EUR bis 1.33 EUR
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PMV33UPE,215 | Hersteller : Nexperia |
MOSFET PMV33UPE/SOT23/TO-236AB |
auf Bestellung 44944 Stücke: Lieferzeit 14-28 Tag (e) |
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PMV33UPE,215 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4.4A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V |
auf Bestellung 53365 Stücke: Lieferzeit 21-28 Tag (e) |
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