auf Bestellung 17587 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 0.97 EUR |
| 67+ | 0.78 EUR |
| 100+ | 0.53 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.26 EUR |
| 9000+ | 0.24 EUR |
| 24000+ | 0.22 EUR |
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Technische Details PMV37ENER Nexperia
Description: PMV37ENE/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 49mOhm @ 3.5A, 10V, Power Dissipation (Max): 710mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V.
Weitere Produktangebote PMV37ENER nach Preis ab 0.31 EUR bis 1.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PMV37ENER | Hersteller : Nexperia USA Inc. |
 Description: PMV37ENE/SOT23/TO-236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 3.5A, 10V Power Dissipation (Max): 710mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PMV37ENER | Hersteller : Nexperia USA Inc. |
Description: PMV37ENE/SOT23/TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 3.5A, 10V Power Dissipation (Max): 710mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V |
auf Bestellung 3609 Stücke: Lieferzeit 21-28 Tag (e) |
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