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PMV42ENER

PMV42ENER Nexperia USA Inc.

PMV42ENE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
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Technische Details PMV42ENER Nexperia USA Inc.

Description: MOSFET N-CH 30V 4.4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V, Power Dissipation (Max): 500mW (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V.

Weitere Produktangebote PMV42ENER nach Preis ab 0.2 EUR bis 0.96 EUR

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PMV42ENER PMV42ENER Hersteller : Nexperia USA Inc. PMV42ENE.pdf Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
auf Bestellung 12239 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.96 EUR
38+ 0.69 EUR
100+ 0.35 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 28
PMV42ENER PMV42ENER Hersteller : Nexperia PMV42ENE-1539855.pdf MOSFET PMV42ENE/SOT23/TO-236AB
auf Bestellung 76318 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
55+0.96 EUR
72+ 0.72 EUR
115+ 0.45 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
3000+ 0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 55
PMV42ENER Hersteller : NEXPERIA PMV42ENE.pdf PMV42ENER SMD N channel transistors
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