Produkte > NEXPERIA USA INC. > PMV50UPE,215
PMV50UPE,215

PMV50UPE,215 Nexperia USA Inc.


PMV50UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.25 EUR
6000+ 0.24 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details PMV50UPE,215 Nexperia USA Inc.

Description: MOSFET P-CH 20V 3.2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V.

Weitere Produktangebote PMV50UPE,215 nach Preis ab 0.2 EUR bis 1.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMV50UPE,215 PMV50UPE,215 Hersteller : Nexperia USA Inc. PMV50UPE.pdf Description: MOSFET P-CH 20V 3.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
auf Bestellung 19171 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
33+ 0.79 EUR
100+ 0.4 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 24
PMV50UPE,215 PMV50UPE,215 Hersteller : Nexperia PMV50UPE-1319083.pdf MOSFET PMV50UPE/SOT23/TO-236AB
auf Bestellung 14925 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
48+1.09 EUR
62+ 0.84 EUR
100+ 0.53 EUR
1000+ 0.28 EUR
3000+ 0.25 EUR
9000+ 0.21 EUR
24000+ 0.2 EUR
Mindestbestellmenge: 48
PMV50UPE,215 PMV50UPE,215 Hersteller : NEXPERIA NEXP-S-A0003105535-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: NEXPERIA - PMV50UPE,215 - Leistungs-MOSFET, p-Kanal, 20 V, 3.7 A, 0.05 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.7A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 600mV
euEccn: NLR
Verlustleistung: 955mW
Anzahl der Pins: 3Pins
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.05ohm
auf Bestellung 3366 Stücke:
Lieferzeit 14-21 Tag (e)
PMV50UPE,215 PMV50UPE,215 Hersteller : NEXPERIA PMV50UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV50UPE,215 PMV50UPE,215 Hersteller : NEXPERIA PMV50UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar