Produkte > NEXPERIA USA INC. > PMV52ENEAR
PMV52ENEAR

PMV52ENEAR Nexperia USA Inc.

PMV52ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.23 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details PMV52ENEAR Nexperia USA Inc.

Description: MOSFET N-CH 30V 3.2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V, Power Dissipation (Max): 630mW (Ta), 5.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PMV52ENEAR nach Preis ab 0.21 EUR bis 0.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMV52ENEAR PMV52ENEAR Hersteller : Nexperia USA Inc. PMV52ENEA.pdf Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10705 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
38+ 0.69 EUR
100+ 0.42 EUR
500+ 0.38 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 30
PMV52ENEAR PMV52ENEAR Hersteller : Nexperia PMV52ENEA-1596211.pdf MOSFET PMV52ENEA/SOT23/TO-236AB
auf Bestellung 6693 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
59+0.89 EUR
75+ 0.7 EUR
133+ 0.39 EUR
1000+ 0.27 EUR
3000+ 0.23 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 59
PMV52ENEAR PMV52ENEAR Hersteller : NEXPERIA pmv52enea.pdf 30 V, N-channel Trench MOSFET
auf Bestellung 72000 Stücke:
Lieferzeit 14-21 Tag (e)
PMV52ENEAR PMV52ENEAR Hersteller : NEXPERIA pmv52enea.pdf 30 V, N-channel Trench MOSFET
Produkt ist nicht verfügbar
PMV52ENEAR Hersteller : NEXPERIA PMV52ENEA.pdf PMV52ENEAR SMD N channel transistors
Produkt ist nicht verfügbar