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PMXB350UPEZ

PMXB350UPEZ Nexperia USA Inc.

PMXB350UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.22 EUR
Mindestbestellmenge: 5000
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Technische Details PMXB350UPEZ Nexperia USA Inc.

Description: MOSFET P-CH 20V 1.2A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V, Power Dissipation (Max): 360mW (Ta), 5.68W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V.

Weitere Produktangebote PMXB350UPEZ nach Preis ab 0.18 EUR bis 1.04 EUR

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PMXB350UPEZ PMXB350UPEZ Hersteller : Nexperia USA Inc. PMXB350UPE.pdf Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
37+ 0.71 EUR
100+ 0.36 EUR
500+ 0.32 EUR
1000+ 0.25 EUR
2000+ 0.22 EUR
Mindestbestellmenge: 26
PMXB350UPEZ PMXB350UPEZ Hersteller : Nexperia PMXB350UPE-2938683.pdf MOSFET PMXB350UPE/SOT1215/DFN1010D-3
auf Bestellung 1639 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
50+1.04 EUR
69+ 0.76 EUR
158+ 0.33 EUR
1000+ 0.23 EUR
5000+ 0.21 EUR
10000+ 0.19 EUR
25000+ 0.18 EUR
Mindestbestellmenge: 50
PMXB350UPEZ Hersteller : NEXPERIA PMXB350UPE.pdf PMXB350UPEZ SMD P channel transistors
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