PMXB360ENEAZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 80V 1.1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V
Power Dissipation (Max): 400mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.23 EUR |
| 10000+ | 0.21 EUR |
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Technische Details PMXB360ENEAZ Nexperia USA Inc.
Description: MOSFET N-CH 80V 1.1A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V, Power Dissipation (Max): 400mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote PMXB360ENEAZ nach Preis ab 0.21 EUR bis 0.88 EUR
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PMXB360ENEAZ | Hersteller : Nexperia |
MOSFET PMXB360ENEA/SOT1215/DFN1010D-3 |
auf Bestellung 21388 Stücke: Lieferzeit 14-28 Tag (e) |
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PMXB360ENEAZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 1.1A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V Power Dissipation (Max): 400mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 17202 Stücke: Lieferzeit 21-28 Tag (e) |
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PMXB360ENEAZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 1.1A Automotive AEC-Q101 3-Pin DFN-D EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMXB360ENEAZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A Polarisation: unipolar Drain-source voltage: 80V Drain current: 0.7A On-state resistance: 887mΩ Type of transistor: N-MOSFET Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4.5nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4.4A Mounting: SMD Case: DFN1010D-3; SOT1215 Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| PMXB360ENEAZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A Polarisation: unipolar Drain-source voltage: 80V Drain current: 0.7A On-state resistance: 887mΩ Type of transistor: N-MOSFET Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4.5nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4.4A Mounting: SMD Case: DFN1010D-3; SOT1215 |
Produkt ist nicht verfügbar |