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PMXB40UNEZ

PMXB40UNEZ Nexperia


PMXB40UNE-2938633.pdf Hersteller: Nexperia
MOSFET PMXB40UNE/SOT1215/DFN1010D-3
auf Bestellung 21648 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
51+1.03 EUR
73+ 0.72 EUR
112+ 0.47 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
5000+ 0.22 EUR
10000+ 0.2 EUR
Mindestbestellmenge: 51
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Technische Details PMXB40UNEZ Nexperia

Description: MOSFET N-CH 12V 3.2A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V, Power Dissipation (Max): 400mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V.

Weitere Produktangebote PMXB40UNEZ nach Preis ab 0.26 EUR bis 1.17 EUR

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Preis ohne MwSt
PMXB40UNEZ PMXB40UNEZ Hersteller : Nexperia USA Inc. PMXB40UNE.pdf Description: MOSFET N-CH 12V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V
auf Bestellung 4225 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
30+ 0.87 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
2000+ 0.26 EUR
Mindestbestellmenge: 23
PMXB40UNEZ Hersteller : NXP PMXB40UNE.pdf Trans MOSFET N-CH 12V 3.2A 3-Pin DFN-D EP PMXB40UNEZ TPMXB40u
Anzahl je Verpackung: 25 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
100+0.38 EUR
Mindestbestellmenge: 100
PMXB40UNEZ Hersteller : NEXPERIA PMXB40UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 2.5A; Idm: 15A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 2.5A
Pulsed drain current: 15A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±8V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB40UNEZ PMXB40UNEZ Hersteller : Nexperia USA Inc. PMXB40UNE.pdf Description: MOSFET N-CH 12V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V
Produkt ist nicht verfügbar
PMXB40UNEZ Hersteller : NEXPERIA PMXB40UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 2.5A; Idm: 15A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 2.5A
Pulsed drain current: 15A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±8V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar