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PMXB43UNEZ

PMXB43UNEZ Nexperia USA Inc.

PMXB43UNE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
auf Bestellung 55000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.25 EUR
10000+ 0.22 EUR
25000+ 0.21 EUR
50000+ 0.18 EUR
Mindestbestellmenge: 5000
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Technische Details PMXB43UNEZ Nexperia USA Inc.

Description: MOSFET N-CH 20V 3.2A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V, Power Dissipation (Max): 400mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V.

Weitere Produktangebote PMXB43UNEZ nach Preis ab 0.22 EUR bis 1.12 EUR

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PMXB43UNEZ PMXB43UNEZ Hersteller : Nexperia USA Inc. PMXB43UNE.pdf Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
auf Bestellung 56748 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
33+ 0.81 EUR
100+ 0.41 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
2000+ 0.25 EUR
Mindestbestellmenge: 24
PMXB43UNEZ PMXB43UNEZ Hersteller : Nexperia PMXB43UNE-2939008.pdf MOSFET PMXB43UNE/SOT1215/DFN1010D-3
auf Bestellung 15585 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.12 EUR
61+ 0.86 EUR
100+ 0.53 EUR
500+ 0.37 EUR
1000+ 0.28 EUR
5000+ 0.25 EUR
10000+ 0.22 EUR
Mindestbestellmenge: 47
PMXB43UNEZ Hersteller : NEXPERIA PMXB43UNE.pdf PMXB43UNEZ SMD N channel transistors
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