PMXB65ENEZ NXP Semiconductors
auf Bestellung 1233350 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2929+ | 0.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMXB65ENEZ NXP Semiconductors
Description: MOSFET N-CH 30V 3.2A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 3.2A, 10V, Power Dissipation (Max): 400mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V.
Weitere Produktangebote PMXB65ENEZ nach Preis ab 0.25 EUR bis 1.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMXB65ENEZ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 3.2A DFN1010D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 3.2A, 10V Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
|
|
PMXB65ENEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.2A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 3.2A, 10V Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V |
auf Bestellung 9950 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
PMXB65ENEZ | Hersteller : Nexperia |
MOSFET PMXB65ENE/SOT1215/DFN1010D-3 |
auf Bestellung 8939 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
PMXB65ENEZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 3.2A 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
PMXB65ENEZ | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 3.2A 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| PMXB65ENEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 12.8A Case: DFN1010D-3; SOT1215 Gate-source voltage: ±20V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| PMXB65ENEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 12.8A Case: DFN1010D-3; SOT1215 Gate-source voltage: ±20V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |