PMZ290UNE2YL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.2A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Description: MOSFET N-CH 20V 1.2A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 130000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.12 EUR |
30000+ | 0.11 EUR |
50000+ | 0.1 EUR |
100000+ | 0.092 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMZ290UNE2YL Nexperia USA Inc.
Description: NEXPERIA - PMZ290UNE2YL - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.27 ohm, SOT-883, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 1.2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 350mW, Gate-Source-Schwellenspannung, max.: 700mV, euEccn: NLR, Verlustleistung: 350mW, Bauform - Transistor: SOT-883, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.27ohm, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.27ohm, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote PMZ290UNE2YL nach Preis ab 0.11 EUR bis 0.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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PMZ290UNE2YL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1.2A DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Power Dissipation (Max): 350mW (Ta), 5.43W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V |
auf Bestellung 138932 Stücke: Lieferzeit 21-28 Tag (e) |
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PMZ290UNE2YL | Hersteller : Nexperia | MOSFET PMZ290UNE2/SOT883/XQFN3 |
auf Bestellung 124883 Stücke: Lieferzeit 14-28 Tag (e) |
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PMZ290UNE2YL | Hersteller : NEXPERIA |
Description: NEXPERIA - PMZ290UNE2YL - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.27 ohm, SOT-883, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 1.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 350mW Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SOT-883 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.27ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.27ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 7802 Stücke: Lieferzeit 14-21 Tag (e) |
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PMZ290UNE2YL | Hersteller : NEXPERIA |
Description: NEXPERIA - PMZ290UNE2YL - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.27 ohm, SOT-883, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 350 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.27 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 11432 Stücke: Lieferzeit 14-21 Tag (e) |
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PMZ290UNE2YL | Hersteller : NEXPERIA | Trans MOSFET N-CH 20V 1.2A 3-Pin DFN T/R |
auf Bestellung 110000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMZ290UNE2YL | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 800mA Pulsed drain current: 4A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 475mΩ Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMZ290UNE2YL | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 800mA Pulsed drain current: 4A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 475mΩ Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |