auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.077 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMZ600UNELYL Nexperia
Description: MOSFET N-CH 20V 600MA DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Power Dissipation (Max): 2.7W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-883, Part Status: Active, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V.
Weitere Produktangebote PMZ600UNELYL nach Preis ab 0.054 EUR bis 1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PMZ600UNELYL | Hersteller : Nexperia |
 Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
PMZ600UNELYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 600MA DFN1006-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||||
|
|
PMZ600UNELYL | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
PMZ600UNELYL | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
PMZ600UNELYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 600MA DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V |
auf Bestellung 76634 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||||
 |
PMZ600UNELYL | Hersteller : Nexperia |
MOSFET PMZ600UNEL/SOT883/XQFN3 |
auf Bestellung 12840 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||||
 |
PMZ600UNELYL | Hersteller : NEXPERIA |
Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||||
| PMZ600UNELYL | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006-3; SOT883 On-state resistance: 1Ω Mounting: SMD Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||||
|
|
PMZ600UNELYL | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
| PMZ600UNELYL | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006-3; SOT883 On-state resistance: 1Ω Mounting: SMD |
Produkt ist nicht verfügbar |