PMZ600UNEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
auf Bestellung 9230 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 0.81 EUR |
| 48+ | 0.55 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.16 EUR |
| 2000+ | 0.13 EUR |
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Technische Details PMZ600UNEZ Nexperia USA Inc.
Description: MOSFET N-CH 20V 600MA DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-883, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V.
Weitere Produktangebote PMZ600UNEZ nach Preis ab 0.099 EUR bis 0.82 EUR
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PMZ600UNEZ | Hersteller : Nexperia |
MOSFET PMZ600UNE/SOT883/XQFN3 |
auf Bestellung 11477 Stücke: Lieferzeit 14-28 Tag (e) |
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PMZ600UNEZ | Hersteller : NEXPERIA |
20 V, N-channel Trench MOSFET |
Produkt ist nicht verfügbar |
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| PMZ600UNEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006-3; SOT883 On-state resistance: 1Ω Mounting: SMD Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMZ600UNEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 600MA DFN1006-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V |
Produkt ist nicht verfügbar |
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| PMZ600UNEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006-3; SOT883 On-state resistance: 1Ω Mounting: SMD |
Produkt ist nicht verfügbar |