auf Bestellung 6039 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 0.83 EUR |
| 84+ | 0.62 EUR |
| 146+ | 0.36 EUR |
| 500+ | 0.23 EUR |
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Technische Details PMZB290UN,315 Nexperia
Description: MOSFET N-CH 20V 1A DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1006B-3, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V.
Weitere Produktangebote PMZB290UN,315
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMZB290UN,315 | Hersteller : NEXPERIA |
 Trans MOSFET N-CH 20V 1A 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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PMZB290UN,315 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1A DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V |
Produkt ist nicht verfügbar |
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PMZB290UN,315 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1A DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V |
Produkt ist nicht verfügbar |