PMZB370UNE,315 NXP
Hersteller: NXPDescription: NXP - PMZB370UNE,315 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 570000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details PMZB370UNE,315 NXP
Description: MOSFET N-CH 30V 900MA DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: DFN1006B-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V.
Weitere Produktangebote PMZB370UNE,315
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PMZB370UNE,315 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 900MA DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V |
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PMZB370UNE,315 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 900MA DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V |
Produkt ist nicht verfügbar |
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PMZB370UNE,315 | Hersteller : Nexperia |
MOSFET N-Chan 30V 900mA |
Produkt ist nicht verfügbar |