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PMZB550UNEYL

PMZB550UNEYL Nexperia USA Inc.

PMZB550UNE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 590MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.15 EUR
Mindestbestellmenge: 10000
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Technische Details PMZB550UNEYL Nexperia USA Inc.

Description: MOSFET N-CH 30V 590MA DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, Power Dissipation (Max): 310mW (Ta), 1.67W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1006B-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V.

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PMZB550UNEYL PMZB550UNEYL Hersteller : Nexperia USA Inc. PMZB550UNE.pdf Description: MOSFET N-CH 30V 590MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
auf Bestellung 18644 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
2000+ 0.19 EUR
5000+ 0.18 EUR
Mindestbestellmenge: 25
PMZB550UNEYL PMZB550UNEYL Hersteller : Nexperia PMZB550UNE-2938737.pdf MOSFET PMZB550UNE/SOT883B/XQFN3
auf Bestellung 16305 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
42+1.25 EUR
57+ 0.93 EUR
100+ 0.53 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2500+ 0.23 EUR
10000+ 0.18 EUR
Mindestbestellmenge: 42
PMZB550UNEYL Hersteller : NEXPERIA PMZB550UNE.pdf PMZB550UNEYL SMD N channel transistors
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