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PMZB670UPE,315

PMZB670UPE,315 Nexperia USA Inc.

PMZB670UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 680MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.16 EUR
Mindestbestellmenge: 10000
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Technische Details PMZB670UPE,315 Nexperia USA Inc.

Description: MOSFET P-CH 20V 680MA DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: DFN1006B-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 10 V.

Weitere Produktangebote PMZB670UPE,315 nach Preis ab 0.17 EUR bis 1.15 EUR

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PMZB670UPE,315 PMZB670UPE,315 Hersteller : Nexperia USA Inc. PMZB670UPE.pdf Description: MOSFET P-CH 20V 680MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 10 V
auf Bestellung 27710 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
35+ 0.75 EUR
100+ 0.38 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
2000+ 0.19 EUR
5000+ 0.18 EUR
Mindestbestellmenge: 25
PMZB670UPE,315 PMZB670UPE,315 Hersteller : Nexperia PMZB670UPE-2938757.pdf MOSFET PMZB670UPE/SOT883B/XQFN3
auf Bestellung 8809 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
46+1.15 EUR
61+ 0.85 EUR
108+ 0.48 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
5000+ 0.19 EUR
10000+ 0.17 EUR
Mindestbestellmenge: 46
PMZB670UPE,315 Hersteller : NEXPERIA PMZB670UPE.pdf Description: NEXPERIA - PMZB670UPE,315 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1934000 Stücke:
Lieferzeit 14-21 Tag (e)
PMZB670UPE,315 Hersteller : NEXPERIA PMZB670UPE.pdf PMZB670UPE.315 SMD P channel transistors
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