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PQMH9Z

PQMH9Z Nexperia


PQMH9-2938875.pdf Hersteller: Nexperia
Digital Transistors PQMH9/SOT1216/DFN1010B-6
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Lieferzeit 70-84 Tag (e)
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59+0.89 EUR
83+ 0.63 EUR
131+ 0.4 EUR
1000+ 0.18 EUR
5000+ 0.16 EUR
10000+ 0.12 EUR
25000+ 0.11 EUR
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Technische Details PQMH9Z Nexperia

Description: TRANS PREBIAS 2NPN DFN1010B-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 230mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Frequency - Transition: 230MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: DFN1010B-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

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PQMH9Z PQMH9Z Hersteller : Nexperia USA Inc. PQMH9.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PQMH9Z PQMH9Z Hersteller : Nexperia USA Inc. PQMH9.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar