PRMD10Z Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 185 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 0.81 EUR |
| 47+ | 0.55 EUR |
| 100+ | 0.27 EUR |
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Technische Details PRMD10Z Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 480mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Frequency - Transition: 230MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: DFN1412-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote PRMD10Z nach Preis ab 0.094 EUR bis 0.82 EUR
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PRMD10Z | Hersteller : Nexperia |
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auf Bestellung 3659 Stücke: Lieferzeit 14-28 Tag (e) |
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PRMD10Z | Hersteller : NEXPERIA |
Trans Digital BJT NPN/PNP 50V 100mA 480mW Automotive 6-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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PRMD10Z | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 480mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 230MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1412-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |