PRMD3Z

PRMD3Z Nexperia USA Inc.


PRMD3.pdf Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.13 EUR
Mindestbestellmenge: 5000
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Produktbewertung abgeben

Technische Details PRMD3Z Nexperia USA Inc.

Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 480mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Frequency - Transition: 230MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: DFN1412-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PRMD3Z nach Preis ab 0.14 EUR bis 0.83 EUR

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Preis ohne MwSt
PRMD3Z PRMD3Z Hersteller : Nexperia USA Inc. PRMD3.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5902 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
46+ 0.57 EUR
100+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 32
PRMD3Z PRMD3Z Hersteller : Nexperia PRMD3-1600116.pdf Bipolar Transistors - BJT PRMD3/SOT1268 DFN1412-6
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