Technische Details PSMN012-100YLX Nexperia
Description: MOSFET N-CH 100V 85A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V, Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7973 pF @ 25 V.
Weitere Produktangebote PSMN012-100YLX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PSMN012-100YLX | Hersteller : NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 339A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 33.1mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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PSMN012-100YLX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 85A 5-Pin(4+Tab) LFPAK |
Produkt ist nicht verfügbar |
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PSMN012-100YLX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 85A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7973 pF @ 25 V |
Produkt ist nicht verfügbar |
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PSMN012-100YLX | Hersteller : Nexperia |
MOSFET PSMN012-100YL/SOT669/LFPAK |
Produkt ist nicht verfügbar |
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| PSMN012-100YLX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 339A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 33.1mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |