Produkte > NXP USA INC. > PSMN050-80BS,118
PSMN050-80BS,118

PSMN050-80BS,118 NXP USA Inc.


PHGLS24321-1.pdf?t.download=true&u=5oefqw Hersteller: NXP USA Inc.
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 12 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN050-80BS,118 NXP USA Inc.

Description: POWER FIELD-EFFECT TRANSISTOR, 2, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 12 V.

Weitere Produktangebote PSMN050-80BS,118

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PSMN050-80BS,118 PSMN050-80BS,118 Hersteller : Nexperia PSMN050-80BS-1320618.pdf MOSFET N-CH 80 V 46 MOHM MOSFET
Produkt ist nicht verfügbar