PSMN0R7-25YLDX Nexperia
auf Bestellung 153000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 2.05 EUR |
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Technische Details PSMN0R7-25YLDX Nexperia
Description: MOSFET N-CH 25V 300A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56; Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 110.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 12 V.
Weitere Produktangebote PSMN0R7-25YLDX nach Preis ab 1.74 EUR bis 6.76 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN0R7-25YLDX | Hersteller : Nexperia | Trans MOSFET N-CH 25V 300A Automotive 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN0R7-25YLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 300A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 12 V |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN0R7-25YLDX | Hersteller : Nexperia | Trans MOSFET N-CH 25V 300A Automotive 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN0R7-25YLDX | Hersteller : Nexperia | Trans MOSFET N-CH 25V 300A Automotive 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN0R7-25YLDX | Hersteller : Nexperia | MOSFET PSMN0R7-25YLD/SOT1023/4 LEADS |
auf Bestellung 7991 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN0R7-25YLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 300A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 12 V |
auf Bestellung 8763 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN0R7-25YLDX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN0R7-25YLDX - Leistungs-MOSFET, NextPowerS3, n-Kanal, 25 V, 300 A, 570 µohm, SOT-1023, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 25V rohsCompliant: Y-EX Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.66V euEccn: NLR Verlustleistung: 158W Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 570µohm |
auf Bestellung 1313 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN0R7-25YLDX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN0R7-25YLDX - Leistungs-MOSFET, NextPowerS3, n-Kanal, 25 V, 300 A, 570 µohm, SOT-1023, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 25V rohsCompliant: Y-EX Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.66V euEccn: NLR Verlustleistung: 158W Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 570µohm |
auf Bestellung 1313 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN0R7-25YLDX | Hersteller : NEXPERIA | Trans MOSFET N-CH 25V 300A Automotive 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 13500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN0R7-25YLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 235A Power dissipation: 158W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.47mΩ Mounting: SMD Gate charge: 110.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN0R7-25YLDX | Hersteller : Nexperia | Trans MOSFET N-CH 25V 300A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN0R7-25YLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 235A Power dissipation: 158W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.47mΩ Mounting: SMD Gate charge: 110.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |